EE 7410

Power Electronics I

Wright State University-Main Campus · UGRD · Fall 2026

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Silicon and silicon carbide power devices; Fast-recovery, ultra-fast-recovery, and p-n junctions and Schottky power diodes; performance parameters; Power MOSFETs and IGBTs; static and dynamic characteristics; voltage and current stress; Pulse-width modulated (PWM) DC-DC power converts: topologies of power stages of power converters, such buck-boost, flyback, forward, half bridge, full-bridge, and push-pull power stages. Department Managed Prerequisite(s): Graduate level EE 5310 Minimum Grade of C

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Class #wright_main_campus-EE7410Fall 2026UGRD3 credits
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