Advanced Characterization of Electronic Materials and Devices.

Catalog description

Semester course; 3 lecture hours. 3 credits. Prerequisite: EGRE 303 or permission of instructor. This course discusses crystal symmetry in relation with physical properties of crystalline solids, with special emphasis on semiconductor materials forming the basis of modern electronic and optoelectronic devices, point and extended defects and their effects on electronic and optical properties of semiconductor materials and device performance, and defect formation during processing. The course also covers in depth structural, electrical and optical techniques used to reveal various structural defects: the theory and practice of X-ray, neutron and electron diffraction methods, transmission and scanning electron microscopy, scanning probe microscopy, Hall effect, deep-level transient spectroscopy, photo- and cathodoluminescence, and time-resolved spectroscopy, with particular focus on their applications to real semiconductor materials and device structures.