EECE 2100

Solid State Fundamentals and Devices

Tennessee State University · UGRD · Fall 2026

1 section
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Electrical conduction in metals, energy band models for electrical conduction, charge carriers, intrinsic semiconductors, extrinsic semiconductors, semiconductor junctions and devices; diodes, diode models; transport models and characteristics of bipolar junction (BJT); introduction to field effect transistors (MOSFETs & JFETs).

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Class #tennessee-EECE2100Fall 2026UGRD3 credits
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