GEN 5604

Advanced VLSI Devices

Stanford University · UGRD · Fall 2026

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In modern VLSI technologies, device electrical characteristics are sensitive to structural details and therefore to fabrication techniques. How are advanced VLSI devices designed and what future changes are likely? What are the implications for device electrical performance caused by fabrication techniques? Physical models for nanometer scale structures, control of electrical characteristics (threshold voltage, short channel effects, ballistic transport) in small structures, and alternative device structures for VLSI.

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Class #stanford-5604Fall 2026UGRD3 credits
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