GEN 10549
Defects in semiconductors
Stanford University · UGRD · Fall 2026
Catalog description
Introduction to dopants and crystal defects in semiconductors and landmark research papers in this area. Course covers point defects, dislocations, grain boundaries, interfaces etc. and how and why they impact a range of semiconductor devices such as transistors, LEDs, lasers, solar cells, and photodetectors. Emphasis on building phenomenological models of defect structure-property-processing relationships in semiconductors like silicon, GaN, and emerging defect-tolerant semiconductors. Overview of key experimental characterization techniques for defects. Key concepts from semiconductor physics and the materials science of crystal defects will be reviewed. Pre-requisites: MATSCI 209 or EE216 or equivalent
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