SiGe and SOI Devices and Technologies

Catalog description

This course introduces students to the fundamentals of III-V, SiGe and Silicon on Insulator (SOI) devices and fabrication technologies. The course will first discuss the band structure of the SiGe material system, and how its properties of band structure and enhanced mobility may be utilized to improve traditional Si devices. Basic heterojunciton theory is introduced to students. Some specific applications that are introduced include heterojunction bipolar transistors (HBTs), SiGe-channel MOS devices, high-electron mobility transistors (HEMTs) and tunnel FETs. Fabrication technologies for realizing SOI substrates that include SIMOX and SMART CUT technologies are described. The physics of transistors built on SOI substrates will be discussed. At the completion of the course, students will write a review paper on a topic related to the course.