EEEE 512

Advanced Semiconductor Devices

Rochester Institute of Technology · UGRD · Fall 2026

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This is an advanced undergraduate course in semiconductor electronics and device physics. The course covers the following topics: (1) Bipolar junction transistor (BJT) fundamentals; (2) Advanced BJT topics; (3) Metal-oxide-semiconductor field-effect transistor (MOSFET) fundamentals; (4) Advanced MOSFET topics.

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Class #rochester_2-EEEE512Fall 2026UGRD3 credits
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