ESE 5760

Semiconductor Memory Devices and Circuit Design

University of Pennsylvania · UGRD · Fall 2026

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Computing system performance and energy efficiency is heavily dependent upon memory subsystem characteristics. This course introduces students to various semiconductor memories including: (1) Ubiquitous technologies such as static random-access memory (SRAM), dynamic RAM (DRAM), and Flash. (2) Emerging and recently commercialized non-volatile memories (NVMs) built using resistive (RRAM), conductive bridge (CBRAM), phase change (PCRAM), magnetoresistive (MRAM), and ferroelectric (FeRAM) devices. (3) Other memory devices including ferroelectric transistors (FeFET), ferrodiodes (FeD), and semivolatile gain cells (GC). The course will cover memory design considerations, including memory device, array, and peripheral circuit operation, co-design, scaling and fabrication, and system-level memory optimizations. The course will also give an overview of recent progress in memory-centric design (such as near- and in-memory computing) using these technologies, with a focus on machine learning applications. Recommended Prerequisite: ESE 2180 or ESE 5720 .

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Class #pennsylvania_2-ESE5760Fall 2026UGRD1 credits
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