Wide Band Gap Semiconductor Power Devices

Catalog description

This course provides students with an in-depth knowledge of power devices built from wide bandgap semiconductors: the design of high breakdown voltages, the physics of unique power rectifier structures suitable for SiC material, the operating principles for unique SiC power MOSFETs, and GaN HEMT devices, the development of bipolar power devices from SiC to achieve ultra-high voltage performance and the performance of wide bandgap semiconductor power devices as compared to advanced silicon devices.