Physics of Advanced Semiconductor Device Processing. 3 credits, 3 contact hours

Catalog description

Prerequisites: NJIT: EE 657, R755 687; or equivalent. Intended for doctoral students in applied physics, electrical engineering, and materials science. (Rutgers = R755 789)Silicon and GaAS technologies: crystal growth methods, epitaxy, oxidation, lithography, dry and wet etching techniques, polysilicon, diffusion, ion implantation, metallization (including silicidation), process integration, analytical characterization techniques, assembly and packaging, and yield and reliability.