Fabrication Principles of Electronic and Optoelectronic Devices. 3 credits, 3 contact hours

Catalog description

Prerequisite: ECE 657 or equivalent. Overview of all major processing steps in fabrication of integrated circuits such as crystal growth, epitaxy, oxidation, diffusion, ion implantation and etching. Formation of thin film structures along with techniques for defining submicron structures. Emphasizes silicon device technology but also includes processing of compound semiconductors such as gallium arsenide.