ECE 3421

Very Large Scale Integrated (VLSI) Design and Simulation

University of Connecticut-Hartford Campus · UGRD · Fall 2026

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Design of MOS transistors, including short channel effects in sub-micron devices; scaling laws; design rules. Layout of NMOS and CMOS logic gates; power-delay calculations. Design of static and/or dynamic memories. Laboratory emphasizes schematic capture, simulation, timing analysis and testing; layout of custom IC's; use of VHDL.

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Class #connecticut_hartford_campus-1728Fall 2026UGRD4 credits
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