ELEN E6302
MOS TRANSISTORS
Columbia University in the City of New York · UGRD · Fall 2026
1 section
Catalog description
Operation and modeling of MOS transistors. MOS two- and three-terminal structures. The MOS transistor as a four-terminal device; general charge-sheet modeling; strong, moderate, and weak inversion models; short-and-narrow-channel effects; ion-implanted devices; scaling considerations in VLSI; charge modeling; large-signal transient and small-signal modeling for quasistatic and nonquasistatic operation
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001
Availability not recently verifiedClass #columbia_in_city_new_york-ELENE6302Fall 2026UGRD3.00 credits
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