EEE 236

Advanced Semiconductor Devices.

California State University, Sacramento · UGRD · Fall 2026

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Semiconductor device modeling, including the application of the continuity equation and Poissons equation to abrupt and graded p/n junctions, semiconductor/metal contacts, junction field effect transistors (JFET), metal-oxide-semiconductor transistors (MOSFET), and bipolar junction transistors (BJT). Special topics include compound semiconductor devices and heterostructures.

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Class #california_state_sacramento-2209Fall 2026UGRD3 credits
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