EE 311LLB

Electronic Devices and Circuits II

University at Buffalo · UGRD · Fall 2026

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Biasing and active loads in bipolar junction transistor (BJT) and field-effect transistor (FET) integrated circuits; current sources; differential and multistage amplifiers; frequency response of single and multiple transistor amplifier circuits; digital circuits with an emphasis on complementary metal-oxide-semiconductor (CMOS) technology.

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Class #buffalo-EE311LLBFall 2026UGRD3 credits
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