EECE 433

Advanced Semiconductor Lasers

Binghamton University · UGRD · Fall 2026

1 section

Catalog description

Physics, device structure, and operation of semiconductor lasers. Band structure in solids, optical processes in semiconductors, p-n junctions, and quasi-Fermi levels; rate equation model for semiconductor lasers, static and dynamic characteristics; characteristics of distributed feedback, Bragg reflector, vertical cavity and Fabry-Perot lasers. Technical Elective. Prerequisite: EECE 332. Offered every third semester.

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Class #binghamton-EECE433Fall 2026UGRD3 credits

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