Lithography and Nanoscale Patterning

Catalog description

Lithography is the principal patterning method used in microelectronics and integrated circuit manufacturing. Chemistry of conventional AgX photography is introduced as a starting point. Chemistries of photoresists used in high-volume manufacture of integrated circuits are discussed, including resists based on i-line (365 nm), DUV (248 nm), ArF (193 nm), and Extreme Ultraviolet (13.5 nm) wavelengths. Optical phenomena that determine the performance of commercial lithography systems will be covered, including: off-axis illumination, overlay, optical proximity corrections, mask error enhancement factor, phase-shift masks, diffraction limits, and outgassing and optics contamination. Additionally, the physics and chemistry of the role of secondary electrons in EUV will be discussed. Between 2-4 guest lectures are given by industrial experts in advanced lithography. Prerequisite(s): N SCI/I NSC 407. Prerequisite(s) or corequisite(s): N ENG/I NEN 442.