Fundamentals of Nanoelectronics

Catalog description

Introduces students to nanoscale electronic devices. Includes basic, band theory-derived operation of semiconductor devices including p-n junctions (diodes) and transistors (bi-polar and classic field-effect devices). Classic, solid-state analysis of energy bands, electrostatic band-bending, diffusion current, drift current, carrier generation, and carrier recombination in both equilibrium and field-biased conditions. This analysis is combined with the introduction/review of quantum statistics for holes and electrons. Specific applications are treated with respect to metal-semiconductor contacts and selected semi-metal (carbon) systems. Students will be introduced to device-level testing through the use of advanced wafer level probes in the CNSE 300mm full flow process facility. Prerequisite(s): restricted to seniors.